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F 58
Fisher, David J. ,
Rhenium Disulfide / / David J. Fisher. - Millersville, PA : : Materials Research Forum LLC,, [2018]. - 1 online resource (150 p.). - (Materials Research Foundations ; ; volume 40). - URL: https://library.dvfu.ru/lib/document/SK_ELIB/17F05EF4-C260-471D-A8C8-23BB398E8C46. - ISBN 1945291931 (electronic book). - ISBN 9781945291937 (electronic bk.)
Description based on online resource; title from digital title page (viewed on December 14, 2018).
Параллельные издания: Print version: : Fisher, David Rhenium Disulfide. - Millersville, PA : Materials Research Forum LLC,c2018
Содержание:
Intro; Table of Contents; Introduction; Chemical Synthesis; Sample Preparation; Molecular Structure; Defects; Electronic Structure; Properties; Mechanical; Optical; Semiconduction; Magnetic; Applications; Electronic Devices; Energy Storage; Catalysis; Transistors; Resistors; Lasers; Medical; References; Keywords
~РУБ DDC 546.545
Рубрики: Rhenium compounds.
SCIENCE / Chemistry / Inorganic
Аннотация: Rhenium disulfide, especially in low-dimensional form, is a subject of lively research into its electronic and optical properties. The field of twodimensional materials such as graphene and its analogues has been growing very rapidly. Keywords: Electronic Devices, Energy Storage, Energy Harvesting, Catalysis, Transistors, Resistors, Lasers, Rhenium Disulfide, Rhenium Diselenide, Two-dimensional Materials, Layered Materials, Black Phosphorus, Transition-metal Dichalcogenides, Metal-free Magnetism, ReS2, ReSe2, TiS3, ZrS3, MoS2, MoSe2, WS2, WSe2.
F 58
Fisher, David J. ,
Rhenium Disulfide / / David J. Fisher. - Millersville, PA : : Materials Research Forum LLC,, [2018]. - 1 online resource (150 p.). - (Materials Research Foundations ; ; volume 40). - URL: https://library.dvfu.ru/lib/document/SK_ELIB/17F05EF4-C260-471D-A8C8-23BB398E8C46. - ISBN 1945291931 (electronic book). - ISBN 9781945291937 (electronic bk.)
Description based on online resource; title from digital title page (viewed on December 14, 2018).
Параллельные издания: Print version: : Fisher, David Rhenium Disulfide. - Millersville, PA : Materials Research Forum LLC,c2018
Содержание:
Intro; Table of Contents; Introduction; Chemical Synthesis; Sample Preparation; Molecular Structure; Defects; Electronic Structure; Properties; Mechanical; Optical; Semiconduction; Magnetic; Applications; Electronic Devices; Energy Storage; Catalysis; Transistors; Resistors; Lasers; Medical; References; Keywords
Рубрики: Rhenium compounds.
SCIENCE / Chemistry / Inorganic
Аннотация: Rhenium disulfide, especially in low-dimensional form, is a subject of lively research into its electronic and optical properties. The field of twodimensional materials such as graphene and its analogues has been growing very rapidly. Keywords: Electronic Devices, Energy Storage, Energy Harvesting, Catalysis, Transistors, Resistors, Lasers, Rhenium Disulfide, Rhenium Diselenide, Two-dimensional Materials, Layered Materials, Black Phosphorus, Transition-metal Dichalcogenides, Metal-free Magnetism, ReS2, ReSe2, TiS3, ZrS3, MoS2, MoSe2, WS2, WSe2.
2.
Подробнее
A 10
A., A. LEBEDEV.
MATERIALS RESEARCH FOUNDATIONS [[electronic resource] :] : radiation effects in silicon carbide. / A. LEBEDEV. A. - [Place of publication not identified] : : MATERIALS RESEARCH FORUM,, 2017. - 1 online resource. - (Materials Research Foundations ; ; volume 6 (2017)). - URL: https://library.dvfu.ru/lib/document/SK_ELIB/EAC08324-BF69-4D9E-BEE9-0D25A8034D2A. - ISBN 1945291117 (electronic bk.). - ISBN 9781945291111 (electronic bk.)
Параллельные издания: Print version: : Lebedev, A.A. Radiation Effects in Silicon Carbide. - Millersville, PA : Materials Research Forum LLC, ©2016. - ISBN 9781945291104
Содержание:
2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons2.8.1 Introduction; 2.8.2 Generation of primary radiation defects under electron irradiation; 2.8.3 Formation of secondary radiation defects; 2.8.4 Comparison with experiment; Conclusion; References; 3; 3.1 Introduction; 3.2 Intrinsic defects in silicon carbide; 3.2.1 Centers in the lower half of the energy gap; 3.2.2 Defects in the upper half of the energy gap; 3.3 Radiation doping of SiC; 3.3.1 Electrons; 3.3.2 Neutrons.
3.3.3 Alpha -- particles3.3.4 Protons; 3.3.5 Ion implantation; 3.5 Radiation -- stimulated photoluminescence in SiC; 3.5.1 "Defect" photoluminescence; 3.5.2 Restorian of SiC characteristics upon annealing; References; 4; 4.1 Change in parameters of SiC devices under irradiation; 4.1.1 Schottky diodes; 4.1.2 PN diodes; 4.1.3 SiC field -- effect transistors; 4.2 Possible transformation of the SiC polytype under irradiation; 4.2.1 Possible resons for the polytypism of SiC; 4.2.2 Selected experimental results; 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide.
4.3.1 Dependence of the radiation hardness on the functional purpose of a device4.3.2 Effect of temperature on the radiation hardness; 4.4 Conclusion; 4.5 Acknowledgments; References; keywords_editors.
~РУБ DDC 546/.6832
Рубрики: Silicon carbide--Effect of radiation on.
Materials science--Data processing.
SCIENCE / Chemistry / Inorganic
Аннотация: The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed.
A 10
A., A. LEBEDEV.
MATERIALS RESEARCH FOUNDATIONS [[electronic resource] :] : radiation effects in silicon carbide. / A. LEBEDEV. A. - [Place of publication not identified] : : MATERIALS RESEARCH FORUM,, 2017. - 1 online resource. - (Materials Research Foundations ; ; volume 6 (2017)). - URL: https://library.dvfu.ru/lib/document/SK_ELIB/EAC08324-BF69-4D9E-BEE9-0D25A8034D2A. - ISBN 1945291117 (electronic bk.). - ISBN 9781945291111 (electronic bk.)
Параллельные издания: Print version: : Lebedev, A.A. Radiation Effects in Silicon Carbide. - Millersville, PA : Materials Research Forum LLC, ©2016. - ISBN 9781945291104
Содержание:
2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons2.8.1 Introduction; 2.8.2 Generation of primary radiation defects under electron irradiation; 2.8.3 Formation of secondary radiation defects; 2.8.4 Comparison with experiment; Conclusion; References; 3; 3.1 Introduction; 3.2 Intrinsic defects in silicon carbide; 3.2.1 Centers in the lower half of the energy gap; 3.2.2 Defects in the upper half of the energy gap; 3.3 Radiation doping of SiC; 3.3.1 Electrons; 3.3.2 Neutrons.
3.3.3 Alpha -- particles3.3.4 Protons; 3.3.5 Ion implantation; 3.5 Radiation -- stimulated photoluminescence in SiC; 3.5.1 "Defect" photoluminescence; 3.5.2 Restorian of SiC characteristics upon annealing; References; 4; 4.1 Change in parameters of SiC devices under irradiation; 4.1.1 Schottky diodes; 4.1.2 PN diodes; 4.1.3 SiC field -- effect transistors; 4.2 Possible transformation of the SiC polytype under irradiation; 4.2.1 Possible resons for the polytypism of SiC; 4.2.2 Selected experimental results; 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide.
4.3.1 Dependence of the radiation hardness on the functional purpose of a device4.3.2 Effect of temperature on the radiation hardness; 4.4 Conclusion; 4.5 Acknowledgments; References; keywords_editors.
Рубрики: Silicon carbide--Effect of radiation on.
Materials science--Data processing.
SCIENCE / Chemistry / Inorganic
Аннотация: The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed.
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